Process Control in Metalorganic Chemical Vapor Deposition of CdTe
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چکیده
منابع مشابه
Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride
The metalorganic chemical vapor deposition of In0.06Ga0.94As1 xNx, with x 1⁄4 0.00–0.02, has been examined using nitrogen trifluoride (NF3) and tertiarybutylarsine. The solid N/V ratio increased linearly with the gas-phase N/V ratio up to a limit of 2.0% nitrogen in the film at a gas N/V 1⁄4 0.35. No further increase in nitrogen content could be achieved at a growth temperature of 550 1C unless...
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Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...
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We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2-mm-thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly incr...
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The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surf...
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ژورنال
عنوان ژورنال: Materials Transactions, JIM
سال: 1994
ISSN: 0916-1821,2432-471X
DOI: 10.2320/matertrans1989.35.130